The 905 nm GaAs laser probe delivers pulses in nanoseconds, producing average powers of 100 mW and peak powers up to 100 W per diode. This results in a higher concentration of light energy (I₀), or photon density at tissue depth, without the risk of burning tissue.
• 2 channels
• Full Color touch screen
• 4 different laser probes (100mW – 1600mW)
• 22 preset protocols
• 20 free spaces for custom protocols
|Laser probe 100 mW, super pulsed HH diode (905nm)||100mW||100W|
|Laser probe 500 mW, continuous laser diode (808nm)||500mW|
|Cluster probe 4 χ 100mW, continuous laser diode (808nm)||4 x 100mW|
|Cluster probe 4 χ 400mW, continuous laser diode (808nm)||4 x 400mW|
|Main voltage||100-240 Volt|
|Frequency||50/ 60 Hz|
|Max. power output||20 VA|
|Dimensions||22 x 16 x 14cm (LxWxH)|
|Type of laser diode||GaAs (pulsed) & GaAIAs (continuous)|
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